Liquid‐Injection MOCVD of ZrO2 Thin Films using Zirconium Bis(diethlyamido)‐bis(di‐tert‐butylmalonato) as a Novel Precursor
Liquid‐Injection MOCVD of ZrO2 Thin Films using Zirconium Bis(diethlyamido)‐bis(di‐tert‐butylmalonato) as a Novel Precursor
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使用双（二乙基酰胺）-双（二叔丁基丙二酸）锆作为新型前体进行 ZrO2 薄膜的液体注射 MOCVD
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发表时间：
2006
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通讯作者：
A. Devi
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作者：
Reji Thomas;A. Milanov;R. Bhakta;U. Patil;M. Winter;P. Ehrhart;R. Waser;A. Devi
二乙基氨基锆与丙二酸盐作为螯合配体的高反应性酰胺络合物的稳定化导致稳定的六配位单体络合物，其显示出用于CVD应用的前景。这种新的前驱体，锆双-（二乙基氨基）双（二叔丁基丙二酸）锆，[Zr（NEt 2）2（dbml）2 ]，已进行了表征和测试，在生产型MOCVD反应器中的ZrO 2薄膜沉积。在450 °C以下，ZrO 2薄膜为非晶态，在475 °C以上，薄膜为晶态。原子力显微镜（AFM）显示出较低的粗糙度（2.5A）为沉积的非晶薄膜相比，结晶膜（6.0 A），然而，光滑的结晶膜可以通过沉积后退火的非晶薄膜。研究了Pt/ZrO 2 /SiOx/Si电容器结构的电学性能。相对介电常数达到24的体值，和典型的4 nm厚的膜的漏电流低于10 - 4 A cm-2，在偏压为-1 V。因此，前体显示出有前途的性能，可能应用于高k栅氧化物（MIS）和高k电介质（MIM）结构的沉积。
The stabilization of highly reactive amide complexes of zirconium diethylamide with malonates as chelating ligands leads to a stable six-coordinated monomeric complex which shows promise for CVD applications. This novel precursor, zirconium bis-(diethylamido)bis(di-tert-butylmalonato) zirconium, [Zr(NEt 2 ) 2 (dbml) 2 ], has been characterized and tested in a production-type MOCVD reactor for ZrO 2 thin-film deposition. Up to 450 °C, the ZrO 2 films are amorphous, and above 475 °C films they are crystalline. Atomic force microscopy (AFM) shows a lower roughness (∼2.5A) for as-deposited amorphous films compared to crystalline films (∼6.0 A); however, smooth crystalline films can be obtained by post-deposition annealing of amorphous films. Electrical properties are investigated for Pt/ZrO 2 /SiO x /Si capacitor structures. Relative dielectric permittivity reaches a bulk value of 24, and leakage currents for typically 4 nm thick films are below 10 -4 A cm -2 at a bias of -1 V. Hence, the precursor shows promising properties for possible application in the deposition of high-k gate oxide (MIS) and high-k dielectric (MIM) structures.