Point defect states in Sb-doped germanium
Point defect states in Sb-doped germanium
复制标题
掺锑锗中的点缺陷态
DOI：
10.1063/1.4933384
复制
发表时间：
2015
影响因子：
3.2
通讯作者：
L. Kimerling
中科院分区：
文献类型：
--
作者：
N. Patel;Corentin Monmeyran;A. Agarwal;L. Kimerling
用深能级瞬态谱研究了n型掺锑锗中的缺陷态。钴-60伽马射线用于产生隔离的空位和杂质，这些空位和杂质扩散并与材料中的杂质反应，在带隙的上半部分形成四个缺陷态（E37、E30、E22和E21）。在77 K和300 K的辐照以及等温退火进行表征的四个可观察到的缺陷之间的关系。E37被指定为Sb施主-空位缔合物（E中心），是唯一含有空位的缺陷，估计为2 × 1011 cm−3 Mrad−1的不相关空位-间隙对引入率。其余三种缺陷态是间隙缔合物，并且在彼此之间转换。E22、E21和E30之间的转化率表明E22可能包含两个质子。
Defect states in n-type Sb-doped germanium were investigated by deep-level transient spectroscopy. Cobalt-60 gamma rays were used to generate isolated vacancies and interstitials which diffuse and react with impurities in the material to form four defect states (E37, E30, E22, and E21) in the upper half of the bandgap. Irradiations at 77 K and 300 K as well as isothermal anneals were performed to characterize the relationships between the four observable defects. E37 is assigned to the Sb donor-vacancy associate (E-center) and is the only vacancy containing defect giving an estimate of 2 × 1011 cm−3 Mrad−1 for the uncorrelated vacancy-interstitial pair introduction rate. The remaining three defect states are interstitial associates and transform among one another. Conversion ratios between E22, E21, and E30 indicate that E22 likely contains two interstitials.