Estimation of Carrier Suppression by High-Energy Boron-Implanted Layer for Soft Error Reduction
Estimation of Carrier Suppression by High-Energy Boron-Implanted Layer for Soft Error Reduction
复制标题
用于减少软错误的高能硼注入层的载流子抑制估计
DOI：
10.1143/jjap.33.7148
复制
发表时间：
1994
期刊：
影响因子：
--
通讯作者：
K. Fujii
中科院分区：
文献类型：
--
作者：
Takehisa Kishimoto;H. Sayama;M. Takai;Y. Ohno;K. Sonoda;T. Nishimura;A. Kinomura;Y. Horino;K. Fujii
用高能质子微探针测量离子感生电流，研究了高能硼注入层对载流子的抑制作用。质子微探针在1.3和2.0兆电子伏已被照射正常的n+p二极管产生电子空穴对。硼注入形成的埋层可以减少微探针辐照引起的载流子聚集。结果表明，电荷收集率与注入剂量有关，而与埋层深度无关。
Effect of charge-carrier suppression by a high-energy boron-implanted layer has been investigated by ion-induced-current measurement using high-energy proton microprobes. Proton microprobes at 1.3 and 2.0 MeV have been irradiated normal to the n+p diode to generate electron-hole pairs. The collection of charge carriers induced by microprobe irradiation could be reduced by a buried layer formed by boron implantation. It was found that the rate of charge collection depended on the implantation dose but not on the depth of the buried layer.