A low-temperature method to produce highly reduced graphene oxide
A low-temperature method to produce highly reduced graphene oxide
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一种低温制备高度还原氧化石墨烯的方法
DOI：
10.1038/ncomms2555
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发表时间：
2013-02-01
影响因子：
16.6
通讯作者：
Li, Jinghong
中科院分区：
文献类型：
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作者：
Feng, Hongbin;Cheng, Rui;Li, Jinghong
氧化石墨烯的化学还原可用于生产大量还原的氧化石墨烯，在电子、光电子、复合材料和储能器件等领域具有潜在的应用前景。在这里，我们报告了一种高效的一锅还原氧化石墨烯，使用的是钠-氨水溶液作为还原剂。钠氨溶液中的溶剂化电子能有效地促进氧化石墨烯的脱氧和π共轭的恢复，得到氧含量为5.6wt%的氧化石墨烯还原样品。电学表征表明，单一还原氧化石墨烯薄膜的空穴迁移率高达123cm2vs −1。此外，我们还证明了预先形成的氧化石墨烯薄膜可以直接被还原成具有低方阻(~350cm2/ Ω，透过率~80%)的氧化石墨烯薄膜。我们的研究展示了一种新的低温溶液处理方法，以获得高质量的石墨烯材料，具有最低的方阻和最高的载流子迁移率。
Chemical reduction of graphene oxide can be used to produce large quantities of reduced graphene oxide for potential application in electronics, optoelectronics, composite materials and energy-storage devices. Here we report a highly efficient one-pot reduction of graphene oxide using a sodium-ammonia solution as the reducing agent. The solvated electrons in sodium-ammonia solution can effectively facilitate the de-oxygenation of graphene oxide and the restoration of π-conjugation to produce reduced graphene oxide samples with an oxygen content of 5.6 wt%. Electrical characterization of single reduced graphene oxide flakes demonstrates a high hole mobility of 123 cm2Vs−1. In addition, we show that the pre-formed graphene oxide thin film can be directly reduced to form reduced graphene oxide film with a combined low sheet resistance (~350 Ω per square with ~80% transmittance). Our study demonstrates a new, low-temperature solution processing approach to high-quality graphene materials with lowest sheet resistance and highest carrier mobility.