Phonon dephasing and population decay dynamics of the G-band of semiconducting single-wall carbon nanotubes
Phonon dephasing and population decay dynamics of the G-band of semiconducting single-wall carbon nanotubes
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DOI:
10.1103/physrevb.82.165432
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发表时间:
2010-10-19
影响因子:
3.7
通讯作者:
Cicerone, Marcus T.
中科院分区:
文献类型:
--
作者:
Lee, Young Jong;Parekh, Sapun H.;Cicerone, Marcus T.
The dephasing and population decay dynamics of optical phonons are studied for semiconducting single-wall carbon nanotubes (SWCNTs) using broadband time-resolved coherent anti-Stokes Raman scattering and time-resolved incoherent anti-Stokes Raman scattering. By simply adjusting the spectral bandwidth of a continuum pulse, we are able to directly measure both the total dephasing time, T(2), and the population decay time, T(1), of the G-band sequentially in the same sample, which allows for one to exclude artifacts due to comparison of dynamics values measured with different sample conditions and different measurement schemes. The values of T(1) and T(2)/2 are presented for two different SWCNT samples: bundles in a film on glass and a dispersion in water. While the measured T(1) values are similar for the two samples, the pure dephasing times, T*(2)/2, determined from the T(2)/2 and T(1) measurements are faster in bundled SWCNTs than in isolated dispersion. This suggests that neighboring tubes in the film perturbs the vibrational mode more strongly than surrounding surfactants and that the pure dephasing dynamics is more sensitive to the perturbation.