Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact
Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact
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DOI：
10.1063/1.1992660
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发表时间：
2005-07
影响因子：
4
通讯作者：
M. Liao;Y. Koide;J. Alvarez
中科院分区：
文献类型：
--
作者：
M. Liao;Y. Koide;J. Alvarez
我们已经开发了一种热稳定，深紫外（DUV）光电二极管使用碳化钨（WC）肖特基和Ti/WC欧姆接触的硼掺杂同质外延p-金刚石外延层。研究了氩气气氛下热退火对薄膜电学和光响应特性的影响。在高达550°C的温度下退火可改善整流电流-电压特性，从而使220 nm处的DUV响应度大幅增强4×103倍。在1V的反向偏压下，DUV和可见光之间的盲比高达105。热稳定的基于WC的肖特基和欧姆接触的发展提供了一种在高温下稳定工作的金刚石光电探测器的路线。
We have developed a thermally stable, deep-ultraviolet (DUV) photodiode using tungsten carbide (WC) Schottky and Ti/WC ohmic contacts for a boron-doped homoepitaxial p-diamond epilayer. Effects of thermal annealing in an argon ambient on the electrical and photoresponse properties were investigated. Annealing at temperatures up to 550°C improves the rectifying current-voltage characteristics, resulting in a dramatic enhancement of DUV responsivity at 220nm by a factor of 4×103. A blind ratio as large as 105 between DUV and visible light has been achieved at a reverse bias as small as 1V. Development of the thermally stable WC-based Schottky and ohmic contacts provides a route for stable operation of a diamond photodetector at high temperatures.