Why is it possible to detect doped regions of semiconductors in low voltage SEM: a review and update
Why is it possible to detect doped regions of semiconductors in low voltage SEM: a review and update
复制标题
DOI：
10.1002/sia.2108
复制
发表时间：
2005-10
影响因子：
1.7
通讯作者：
M. El-Gomati;F. Zaggout;H. Jayacody;S. Tear;K. Wilson
中科院分区：
文献类型：
--
作者：
M. El-Gomati;F. Zaggout;H. Jayacody;S. Tear;K. Wilson
对于现代和未来的超大规模半导体器件，迫切需要快速、无损和定量的二维掺杂剂仿形。低电压扫描电子显微镜(LVSEM)的出现部分地满足了这一需要，由此可以检测从p型到n型掺杂区域的不同二次电子产生值(在扫描电子显微镜信号中的亮度)以及来自相同掺杂类型的不同亮度级别。然而，产生这种二次电子(SE)对比效应的机制还不完全清楚。对已提出的解释这种SE对比的不同模型进行了回顾。我们报道了新的实验，这些实验支持这种对比是由于建立了金属与半导体的表面接触。还报道了电子剂量、扫描速度和电子束能量等仪器参数对SE对比度的影响。还报道了SE对比度与具有金属氧化物半导体(MOS)特征的表面结构的关系的初步结果。版权所有©2005 John Wiley&Sons，Ltd.
There is an urgent need for fast, non‐destructive and quantitative two‐dimensional dopant profiling of modern and future ultra large‐scale semiconductor devices. The low voltage scanning electron microscope (LVSEM) has emerged to satisfy this need, in part, whereby it is possible to detect different secondary electron yield values (brightness in the SEM signal) from the p‐type to the n‐type doped regions as well as different brightness levels from the same dopant type. The mechanism that gives rise to such a secondary electron (SE) contrast effect is not fully understood, however. A review of the different models that have been proposed to explain this SE contrast is given. We report on new experiments that support the proposal that this contrast is due to the establishment of metal‐to‐semiconductor surface contacts. Further experiments showing the effect of instrument parameters including the electron dose, the scan speeds and the electron beam energy on the SE contrast are also reported. Preliminary results on the dependence of the SE contrast on the existence of a surface structure featuring metal‐oxide semiconductor (MOS) are also reported. Copyright © 2005 John Wiley & Sons, Ltd.