On the operation of a press pack IGBT module under short circuit conditions
On the operation of a press pack IGBT module under short circuit conditions
复制标题
DOI：
10.1109/tadvp.2006.875090
复制
发表时间：
2006-08
影响因子：
--
通讯作者：
Satish Gunturi;Daniel Schneider
中科院分区：
文献类型：
--
作者：
Satish Gunturi;Daniel Schneider
高压直流(HVDC)换流器用压装绝缘栅双极晶体管(IGBT)模块串联，当故障发生时，通过形成稳定的短路以安全的方式发生，同时冗余模块承担故障模块的电压阻断功能。描述了一种使用单独压力触点的这种设计，并从电子封装材料设计的角度报告了从短路开始到由于断路而最终失效所发生的事件。在加速测试条件下对模块进行加速失效的实验，并在短路条件下在操作的不同阶段中断。通过对形成短路的合金截面的分析，研究了冶金合金在短路条件下的形成和随后的时效。液态金属的腐蚀和导电性差的金属间化合物的形成最终导致断路失效。
Press pack insulated gate bipolar transistor (IGBT) modules connected in series for high-voltage direct current (HVDC) converter applications are designed such that when a failure occurs, it occurs in a safe manner by the formation of a stable short circuit, while redundant modules take up the voltage blocking function of the failed module. One such design using individual pressure contacts is described and the events occurring from the initiation of the short circuit to its final failure due to open circuit are reported from an electronics packaging materials design point of view. Experiments to hasten the failure under accelerated test conditions on modules were performed and interrupted at various stages of operation under a short circuit condition. The formation and subsequent aging of the metallurgical alloy under short circuit conditions was investigated by analyzing cross sections of the alloy forming the short circuit. Liquid metal corrosion along with the formation of intermetallics with poor conductivities lead to the final failure by open circuit