High quality ITO thin films grown by dc and RF sputtering without oxygen

High quality ITO thin films grown by dc and RF sputtering without oxygen
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DOI:
10.1088/0022-3727/43/5/055402
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发表时间:
2010-02-10
影响因子:
3.4
通讯作者:
Ozyuzer, Lutfi
Ozyuzer, Lutfi
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Tuna, Ocal;Selamet, Yusuf;Ozyuzer, Lutfi

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采用直流和射频磁控溅射技术在无氧玻璃衬底上生长出高质量的氧化铟锡薄膜。研究了衬底温度、薄膜厚度和溅射方式对生长薄膜结构、电学和光学性能的影响。结果表明,衬底温度对薄膜的结晶性能和电阻率有显著影响。当衬底温度升高到150℃时,直流和射频溅射薄膜在(222)平面上开始出现结晶。我们还发现,随着衬底温度的进一步升高,直流和射频溅射薄膜的首选结晶取向发生了不同的变化。在70 nm的薄膜厚度下,可见光区的光透射率在85%以上。当衬底温度为150℃,薄膜厚度为70 nm时,带隙约为3.64 eV。带隙值随薄膜厚度的增加和衬底温度的升高而增大。我们还测量了薄膜的电阻率和霍尔系数的温度依赖性,并计算了载流子浓度和霍尔迁移率。直流和射频磁控溅射生长薄膜的室温电阻率非常低,分别约为1.28 x 10(-4) ω cm和1.29 x 10(-4) ω cm。
High quality indium tin oxide (ITO) thin films were grown without oxygen by both dc and RF magnetron sputtering techniques on glass substrates. The effects of substrate temperature, film thickness and sputtering method on the structural, electrical and optical properties of the as-grown films were investigated. The results showed that the substrate temperature had substantial effects on the film properties, in particular on the crystallization and resistivity. When the substrate temperature was increased to 150 degrees C, crystallization in the (222) plane started appearing for both dc and RF sputtered films. We additionally found that with further increments of substrate temperature, the preferred crystallization orientation changed differently for dc and RF sputtered films. Optical transmission in the visible region for a film thickness of 70 nm was found to be above 85%. The bandgap was calculated to be about 3.64 eV for the substrate temperature of 150 degrees C for a 70 nm thick film. The value of the bandgap increased with respect to the increment in film thickness as well as substrate temperature. We also measured the temperature dependence of the resistivity and Hall coefficient of the films, and calculated the carrier concentration and Hall mobility. Very low room temperature resistivities for dc and RF magnetron sputtered grown films of about 1.28 x 10(-4) Omega cm and 1.29 x 10(-4) Omega cm, respectively, were obtained.