Structure of Latent Tracks Created by Swift Heavy Ions in Amorphous SiO2 and Zinc Phosphate Glass
Structure of Latent Tracks Created by Swift Heavy Ions in Amorphous SiO2 and Zinc Phosphate Glass
复制标题
无定形 SiO2 和磷酸锌玻璃中快速重离子产生的潜迹结构
DOI:
10.1143/jjap.42.3950
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发表时间:
2003
影响因子:
1.5
通讯作者:
K. Shima
中科院分区:
文献类型:
--
作者:
K. Awazu;S. Roorda;J. Brebner;S. Ishii;K. Shima
The structure of latent tracks introduced by swift-heavy-ion irradiation was examined on both amorphous SiO2 and zinc phosphate glass (68P2O5:25ZnO:4.5Al2O3:2.5Na2O). In amorphous SiO2, the frequency of the infrared absorption assigned to the asymmetric stretching vibration of Si–O decreased with irradiation. This IR peak shift has been found to be related to the transition of normal six-membered rings of SiO4 tetrahedra to planar three-membered rings. The high etching rate of the latent tracks is strongly related to planar three-membered rings. In the ion-irradiated zinc phosphate glass, two bridging oxygen atoms bound to a phosphorus atom turned into one bridging oxygen atom. Scission of the Zn–O bond was not observed. It was concluded that the high etching rate of the latent tracks in zinc–phosphate glass is related to P–O bond scission.