Compact and accurate quantum correction for MOS device simulator
Compact and accurate quantum correction for MOS device simulator
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用于 MOS 器件模拟器的紧凑且精确的量子校正
DOI：
10.1109/iedm.1999.824209
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
T. Sugii
中科院分区：
文献类型：
--
作者：
T. Usuki;T. Tanaka;S. Ohkubo;Y. Momiyama;T. Futatsugi;T. Sugii
提出并论证了一种对MOS器件模型进行量子力学修正的紧凑方法。在这种方法中，由于量子效应在MOS接口的载流子耗尽模型与经典的载流子分布乘以适当的因子，这是唯一确定的MOS器件的材料参数。它可以模拟任何栅压下的n-和p-MOS电容，精度与求解薛定谔方程相同。我们进一步发展了一个简洁的隧穿电流公式。这两种方法的结合可以很好地模拟实验数据，并广泛适用于常规模拟器。
A compact method of quantum-mechanical correction for MOS device models is proposed and demonstrated. In this method, carrier depletion at a MOS interface due to quantum effect is modeled with a classical carrier profile multiplied by a proper factor which is determined uniquely from material parameters of the MOS device. It can simulate n- and p-MOS capacitances at any gate voltage with the same accuracy as solving the Schrodinger equation. We further developed a compact formula of tunneling current. A combination of these two methods can simulate well experimental data and is widely applicable to conventional simulators.