Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires
Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires
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DOI：
10.1103/physrevb.89.165423
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发表时间：
2014-04
影响因子：
3.7
通讯作者：
N. Vainorius;D. Jacobsson;S. Lehmann;A. Gustafsson;K. Thelander;L. Samuelson;M. Pistol
中科院分区：
文献类型：
--
作者：
N. Vainorius;D. Jacobsson;S. Lehmann;A. Gustafsson;K. Thelander;L. Samuelson;M. Pistol
我们已经研究了一个大的个人纤锌矿/锌-砷化镓异质结纳米线，利用透射电子显微镜（TEM），光致发光（PL），阴极发光（CL）。在几种情况下，我们结合PL和TEM在同一条线上。我们发现了一个相当深的发射，显示出强烈的蓝移，随着激发功率密度的增加。通过使用各种实验，我们表明，这种发射是由于跨异质结与II型带对齐的重组。这些数据给出了一个价带偏移约100毫电子伏，与理论预测非常吻合。异质结纳米线上的空间分辨CL数据和纯纤锌矿纳米线上的PL数据表明，纤锌矿GaAs的带隙非常接近锌掺杂GaAs的带隙。（减）
We have investigated a large set of individual wurtzite/zinc-blende GaAs heterojunction nanowires using transmission electron microscopy (TEM), photoluminescence (PL), and cathodoluminescence (CL). In several cases we have combined PL and TEM on the same wire. We find a fairly deep emission that shows a strong blueshift with increasing excitation power density. By using a variety of experiments we show that this emission is due to recombination across a heterojunction with a type II band alignment. The data give a valence band offset of about 100 meV, in excellent agreement with theoretical predictions. Spatially resolved CL data on heterojunction nanowires and PL data on pure wurtzite nanowires show that the band gap of wurtzite GaAs is very close to the band gap of zinc-blende GaAs. (Less)