Ferromagnetic, Ferroelectric, and Optical Modulated Multiple Resistance States in Multiferroic Tunnel Junctions
Ferromagnetic, Ferroelectric, and Optical Modulated Multiple Resistance States in Multiferroic Tunnel Junctions
复制标题
多铁隧道结中的铁磁、铁电和光调制多电阻态
DOI：
10.1021/acsami.8b18727
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发表时间：
2019
影响因子：
9.5
通讯作者：
Mi Wenbo
中科院分区：
文献类型：
--
作者：
Yin Li;Wang Xiaocha;Mi Wenbo
在数据存储器件中，自旋、铁电或光学指数被用作信息载体，并且探索了三个参数之间的二进制耦合以增加电阻状态和所得数据密度。然而，所有的三个信息指标的研究仍然是空白，其中信息载体的数量从以前的两个到三个的增加提供了机会，诱导新的现象和不同的电阻状态。在这项工作中，使用自旋-电子-光子分辨理论，我们证明了自旋，铁电和光学相互作用的可行性，这是进一步检测的自旋和铁电调制的光伏效应在La 2/3Sr 1/3 MnO 3/BiFeO 3/Fe 4 N多铁性隧道结（MFTJs）。此外，基于自旋和铁电诱导的四个电阻状态的MFTJ，特殊的光伏效应将每个电阻状态分裂为光打开和光关闭开关状态，最终导致多个电阻状态。此外，在这些薄膜晶体管中实现了近100%的自旋极化光电流和大的隧穿磁电阻（电阻）。这些结果表明，相互作用的自旋，铁电，和光学指数可以同时作为存储设备中的信息载体，这为开发高效的数据存储器提供了指导。
In data storage devices, spin, ferroelectric, or optical indices have been utilized as information carriers, and the binate couplings among the three parameters are explored to increase the resistance states and resultant data-density. However, studies holding all of the three information indices are still blank, where the increasing number of information carriers from previous two to three provides opportunities for inducing novel phenomena and distinct resistance states. In this work, using the spin–electron–photon resolved theory, we demonstrate the feasibility of spin, ferroelectric, and optical interactions, which are further detected by a spin- and ferroelectric-modulated photovoltaic effect in La2/3Sr1/3MnO3/BiFeO3/Fe4N multiferroic tunnel junctions (MFTJs). Moreover, based on the spin- and ferroelectric-induced four resistance states in MFTJs, the special photovoltaic effect shall split each resistance state into light-on and light-off switching states, which finally lead to multiple resistance states. Besides, nearly 100% spin-polarized photocurrent and large tunneling magnetoresistance (electroresistance) are realized in these MFTJs. These results reveal that interacted spin, ferroelectric, and optical indices can simultaneously serve as information carriers in storage devices, which provide guidance for developing efficient data memories.