Manganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga1−xMnxN
Manganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga1−xMnxN
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DOI：
10.1116/1.2201052
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发表时间：
2006-06
期刊：
影响因子：
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通讯作者：
W. Fenwick;A. Asghar;Shalini Gupta;Hun Kang;M. Strassburg;N. Dietz;S. Graham;M. Kane;I. Ferguson
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文献类型：
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作者：
W. Fenwick;A. Asghar;Shalini Gupta;Hun Kang;M. Strassburg;N. Dietz;S. Graham;M. Kane;I. Ferguson
研究了Mn浓度为0.0% ~ 1.5%时Ga1−xMnxN的结构性质和晶格动力学。通过在金属有机化学气相沉积（MOCVD）生长过程中加入Mn或在MOCVD生长的GaN涂层中注入生长后的离子制备Ga1−xMnxN层。高分辨率x射线衍射分析证实了晶体的完整性和主要第二相的缺失。拉曼光谱显示，薄膜中Mn掺杂的增加显著影响了长程晶格有序，在300cm−1处显示出无序诱导模式，在669cm−1处显示出局部振动模式。两种模式的低强度均与Mn浓度成正比。这些观察结果支持氮空位的形成，即使在优化的MOCVD生长条件下也是如此。与未掺杂的GaN生长相比，生长过程中金属成分的轻微过量和Mn深层受体水平的结合有利于ni的形成。
The structural properties and lattice dynamics of Ga1−xMnxN were studied for Mn concentrations from 0.0% to 1.5%. Ga1−xMnxN layers were fabricated by either Mn incorporation during the metal-organic chemical vapor deposition (MOCVD) growth process or by postgrowth ion implantation into MOCVD-grown GaN epilayers. The crystalline integrity and the absence of major second phase contributions were confirmed by high-resolution x-ray diffraction analysis. Raman spectroscopy showed that increased Mn incorporation in the epilayers significantly affected long-range lattice ordering, revealing a disorder-induced mode at 300cm−1 and a local vibrational mode at 669cm−1. The low intensities of both modes were shown to scale with Mn concentration. These observations support the formation of nitrogen vacancies, even under optimized MOCVD growth conditions. The slight excess of metal components in the growth process compared to undoped GaN growth and the incorporation of Mn deep acceptor levels favors the formation of ni...