Perspectives on spintronics technology development: Giant magnetoresistance to spin transfer torque magnetic random access memory
Perspectives on spintronics technology development: Giant magnetoresistance to spin transfer torque magnetic random access memory
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DOI：
10.1063/5.0075945
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发表时间：
2022-02-01
期刊：
影响因子：
6.1
通讯作者：
Kent, A. D.
中科院分区：
文献类型：
--
作者：
Pinarbasi, M.;Kent, A. D.
1988年发现的巨磁电阻（GMR）效应开创了一个称为自旋电子学的新领域，并获得了2007年诺贝尔物理学奖，该奖项授予Fert和Grunberg。自旋电子学是基于材料的电子自旋和电子电荷的贡献，以促进电子功能，使器件操作的一个额外的自由度。自旋电子学在过去的三十年中发展迅速，有重大发现，技术进步以及材料和器件的发展，导致了许多产品的应用。此外，新的研究领域和技术领域已经被发现并继续扩大。在这个角度来看，在过去的三十年中，该领域的关键技术进步将得到强调，从导致硬盘驱动器中首次使用GMR效应及其在自旋电子生态系统中的影响的发展开始，到目前使用的垂直磁性隧道结（pMTJ）用于自旋转移力矩磁性随机存取存储器（STT-MRAM）设备。将讨论STT-MRAM应用的pMTJ特性的重要方面。该观点将提出一种新的结构，提高了基于pMTJ的STT-MRAM的效率和研究方向，可以推动自旋电子学的进一步发展。(c)2022年作者。除非另有说明，否则所有文章内容均根据知识共享署名（CC BY）许可证（http：//creativecommons.org/licenses/by/4.0/）进行许可。
The discovery of the giant magnetoresistance (GMR) effect in 1988 started a new field called spintronics and was recognized with the 2007 Nobel Prize in Physics, which was awarded to Fert and Grunberg. Spintronics is based on the contribution of both electron spin and electron charges of materials to facilitate electronic functions, enabling one extra degree of freedom for device operations. Spintronics has grown rapidly during the past three decades with significant discoveries, technological advancements, and material and device developments that have led to numerous product applications. Furthermore, new research fields and technology areas have been discovered and continue to expand. In this Perspective, key technological advances in the field during the past three decades will be highlighted, starting with the developments that led to the first use of the GMR effect in hard disk drives and its impact in the spintronic ecosystem to currently used perpendicular magnetic tunnel junctions (pMTJs) for spin transfer torque magnetic random access memory (STT-MRAM) devices. The important aspects of the pMTJ characteristics for the application of STT-MRAM will be discussed. This Perspective will present perspectives on a new structure that enhances the efficiency of the pMTJ-based STT-MRAM and research directions that can drive further advances in spintronics. (c) 2022 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(http://creativecommons.org/licenses/by/4.0/).