Low-Fire Bismuth-Based Dielectric Ceramics for Microwave Use
Low-Fire Bismuth-Based Dielectric Ceramics for Microwave Use
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DOI:
10.1143/jjap.31.3152
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发表时间:
1992-09
影响因子:
1.5
通讯作者:
H. Kagata;Tatsuya Inoue;Junichi Kato Junichi Kato-Junichi-Kato;Ichirou Kameyama Ichirou Kameyama-Ichirou-Kameyama
中科院分区:
文献类型:
--
作者:
H. Kagata;Tatsuya Inoue;Junichi Kato Junichi Kato-Junichi-Kato;Ichirou Kameyama Ichirou Kameyama-Ichirou-Kameyama
We have investigated dielectric properties of several bismuth-based ceramics at microwave frequencies. BiNbO4 ceramics containing CuO and V2O5, had a high Q value of Q=4260 (at 4.3 GHz), ε=43, and τf=+38 ppm/°C. In the Bi2O3-CaO-Nb2O5 system, Bi18Ca8Nb12O65 composition had a high dielectric constant of ε=59, Q=610 (at 3.7 GHz), and τf=+24 ppm/°C. The crystal structure of this composition is considered to be an ordered structure based on the body center tetragonal cell (a=0.377, c=0.542 nm). Furthermore, by substituting Zn for Ca, ε increased and τf changed to negative values. In the composition of 45.75BiO3/2-21.75(Ca0.725Zn0.275)O-32.5NbO5/2, excellent properties of ε=79, Q=360 (at 3.3 GHz), and τf=+1 ppm/°C were obtained. As all the above ceramics can be sintered below 950°C, they are applicable to multilayer microwave devices with Ag inner conductors.