LETTER TO THE EDITOR: Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.31Ga0.69N
LETTER TO THE EDITOR: Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.31Ga0.69N
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致编辑的信：GaN 和 Al0.31Ga0.69N 上铂基和镍基肖特基接触的热稳定性
DOI：
10.1088/0268-1242/17/9/103
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发表时间：
2002
影响因子：
1.9
通讯作者：
I. Moerman
中科院分区：
文献类型：
--
作者：
E. Monroy;F. Calle;Rohit Ranchal;T. Palacios;M. Verdú;F. J. Sanchez;M. Montojo;M. Eickhoff;F. Omnès;Z. Bougrioua;I. Moerman
在这项工作中，我们分析了Pt和Ni基肖特基金属化AlxGa 1-xN（x = 0，0.31）的性能。研究表明，中间薄Ti层可以增强Pt/Au的热稳定性，并导致肖特基势垒高度的增加。GaN上的Pt/Ti/Au接触提供1.18 ± 0.07 eV的势垒高度，在Al 0.31 Ga 0.69 N上增加到2.0 ± 0.1 eV。肖特基接触的进一步改进是通过等离子体增强化学气相沉积SiO2或SixNy的表面钝化来实现的，这将漏电流降低了两个数量级，并由于热老化而在金属中进行了结构修改。
In this work we analyse the performance of Pt- and Ni-based Schottky metallizations on AlxGa1−xN (x = 0, 0.31). An intermediate thin Ti layer is shown to enhance the thermal stability of Pt/Au, and leads to an increase of the Schottky barrier height. Pt/Ti/Au contacts on GaN provide a barrier height of 1.18 ± 0.07 eV, increasing up to 2.0 ± 0.1 eV on Al0.31Ga0.69N. Further improvement of Schottky contacts is achieved by surface passivation with plasma-enhanced chemical vapour deposited SiO2 or SixNy, which reduces the leakage current by two orders of magnitude and structural modifications in the metal due to thermal ageing.