GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy
GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy
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通过气源分子束外延生长的 GaN 的富 GaN 面
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
S. Gonda
中科院分区：
文献类型：
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作者：
K. Iwata;H. Asahi;K. Asami;Reiko Kuroiwa;S. Gonda
由于带隙能量的大弯曲，在GaN 1-xAsx合金的富GaN侧可以实现从紫外到长于2 μm的波长的大变化。在生长GaN缓冲层之后，通过电子回旋共振分子束外延（ECR-MBE）在（0001）蓝宝石衬底上使用离子去除的ECR自由基单元生长GaN 1-xAsx层。在GaN_（1-x）Asx薄膜的生长过程中，观察到了条纹状的反射高能电子衍射（RHEED）图样。激子光致发光（PL）峰从GaN丰富的一侧的GaN 1-xAsx层显示出大的红移作为内容的变化。当达到x=0.009的As含量时，实验获得了19.6 eV的带隙弯曲参数。如此大的弯曲参数值对于在宽波长范围内操作的光学器件的应用是有希望的。
A large variation in wavelength from the ultraviolet to longer than 2 µm could be achieved in the GaN-rich side of the GaN1-xAsx alloy due to the large bowing of bandgap energy. Layers of GaN1-xAsx are grown on (0001) sapphire substrates by electron cyclotron resonance molecular beam epitaxy (ECR-MBE) using an ion-removed ECR radical cell after the growth of GaN buffer layers. During the growth of GaN1-xAsx layers, a streaky reflection high-energy electron diffraction (RHEED) pattern was observed. The excitonic photoluminescence (PL) peak from the GaN-rich side of the GaN1-xAsx layer shows a large red shift as the As content changes. When an As content of up to x=0.009 is attained, a bandgap bowing parameter of 19.6 eV is experimentally obtained. Such a large value of the bowing parameter is promising for applications to optical devices operating over wide range of wavelength.