A field effect transistor (FET)-based immunosensor for detection of HbA1c and Hb
A field effect transistor (FET)-based immunosensor for detection of HbA1c and Hb
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DOI：
10.1007/s10544-010-9498-y
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发表时间：
2011-04-01
影响因子：
2.8
通讯作者：
Xia, Shanhong
中科院分区：
文献类型：
--
作者：
Bian, Chao;Tong, Jianhua;Xia, Shanhong
开发了一种基于场效应晶体管（FET）的免疫传感器，用于通过检测糖化血红蛋白（HbA1c）和血红蛋白（Hb）的浓度来监测糖尿病。这种免疫传感器由基于FET的传感器芯片和一次性扩展栅电极芯片组成。传感器芯片通过标准CMOS工艺制造，并集成了信号读出电路。一次性电极芯片通过微机电系统（MEMS）技术在聚酯塑料板上制造，集成了电极阵列和微反应池。生物分子基于自组装单层和金纳米粒子固定在电极上。实验结果表明，该免疫传感器对浓度为4至24μg/ml的HbA1c以及浓度为60至180μg/ml的Hb实现了线性响应。
A field effect transistor (FET)-based immunosensor was developed for diabetes monitoring by detecting the concentrations of glycated hemoglobin (HbA1c) and hemoglobin (Hb). This immunosensor consists of a FET-based sensor chip and a disposable extended-gate electrode chip. The sensor chip was fabricated by standard CMOS process and was integrated with signal readout circuit. The disposable electrode chip, fabricated on polyester plastic board by Micro-Electro-Mechanical-Systems (MEMS) technique, was integrated with electrodes array and micro reaction pool. Biomolecules were immobilized on the electrode based on self-assembled monolayer and gold nanoparticles. Experimental results showed that the immunosensor achieved a linear response to HbA1c with the concentration from 4 to 24 mu g/ml, and a linear response to Hb with the concentration from 60 to 180 mu g/ml.