High resolution quantitative two-dimensional dopant mapping using energy-filtered secondary electron imaging
High resolution quantitative two-dimensional dopant mapping using energy-filtered secondary electron imaging
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DOI：
10.1063/1.2335980
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发表时间：
2006-09-01
影响因子：
3.2
通讯作者：
Humphreys, C. J.
中科院分区：
文献类型：
--
作者：
Kazemian, P.;Mentink, S. A. M.;Humphreys, C. J.
我们使用具有二次电子能量过滤功能的商用场发射枪扫描电子显微镜，高精度地量化了Si中的二维掺杂物。定量范围为2.8x10(17)-7.5x10(19) cm(-3)，准确度为+/- 8.5%。利用能量滤波，我们测量了3 nm宽p掺杂Si层相对于测试结构的n掺杂衬底的表面电位差δ Phi(s)为0.72 +/- 0.15 V。讨论了空间分辨率的极限，并表明其受二次电子逸出深度的限制。提出了一种快速采集标定后的能量滤波图像的技术。(c) 2006年美国物理研究所。
We have quantified two-dimensional dopant profiles in Si with high accuracy using a commercial field emission gun scanning electron microscope with added secondary electron energy-filtering capabilities. Quantification was achieved for dopant concentrations of 2.8x10(17)-7.5x10(19) cm(-3) with an accuracy of +/- 8.5%. Using energy filtering, we have measured the surface potential difference Delta Phi(s) across a 3 nm wide p-doped Si layer with respect to the n-doped substrate of a test structure to be 0.72 +/- 0.15 V. Spatial resolution limits are discussed and are shown to be limited by the secondary electron escape depth. A technique for the rapid collection of calibrated energy-filtered images is also proposed. (c) 2006 American Institute of Physics.