Growth and scintillation properties of Tm3+ doped Bi4Si3O12 single crystals
Growth and scintillation properties of Tm3+ doped Bi4Si3O12 single crystals
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Tm3 掺杂 Bi4Si3O12 单晶的生长和闪烁性能
DOI：
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发表时间：
2020
影响因子：
0.5
通讯作者：
张学锋
中科院分区：
文献类型：
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作者：
肖学峰;张欢;韦海成;徐家跃;储耀卿;杨波波;张学锋
采用改进的垂直布里奇曼法生长了掺Tm 3+分别为0.5mol%、1.0mol%、2.0mol%的Bi 4Si 3 O 12（BSO）晶体。采用两步烧结法制备了Bi 4Si 3 O 12：Tm（BSO：Tm）多晶粉末，即800℃烧结12 h，冷却至室温，研磨后，再850℃烧结8~ 12 h，用于晶体生长。Bi_4Si_3 O_（12）：Tm（BSO：Tm）晶体的透过率约为80%，光学质量与纯BSO晶体相同。对BSO：Tm晶体的闪烁性能进行了测试和分析。γ射线辐照下的脉冲宽度测量结果表明，掺杂0.5mol%的Tm 2 O3可以提高薄膜的相对光产额。
Doping with Tm3+ of 0.5mol%, 1.0mol%, 2.0mol% in the Bi4Si3O12 (BSO) crystals were grown by the modified vertical Bridgman method, respectively. The Bi4Si3O12:Tm(BSO:Tm) polycrystalline powders are prepared of using two step sintering method, namely sintered 12h at 800℃, cool to room temperature, after grinded, then sintered 8~12h at 850℃, used for crystal growth. The transmittance of Bi4Si3O12:Tm(BSO:Tm) crystals is about 80% and the optical quality of the crystal is same as the pure BSO crystal. The scintillation properties of BSO:Tm crystals are tested and analyzed. Pulse height measurements under γ-ray irradiation show that doping with 0.5 mol% Tm2O3 can increase the relative light yiel…