Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs
Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs
复制标题
AlGaN/GaN MIS-HEMT 的 LPCVD-SiNx 栅极电介质与 III 族氮化物之间的界面研究
DOI：
10.1116/1.4944662
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发表时间：
2016-07-01
影响因子：
1.4
通讯作者：
Jia, Lifang
中科院分区：
文献类型：
--
作者：
Liu, Zhaoyang;Huang, Sen;Jia, Lifang
通过对AlGaN/GaN高电子迁移率晶体管（HEMT）和金属-绝缘体-半导体HEMT（MIS-HEMT）的系统比较，研究了低压化学气相沉积（LPCVD）生长的氮化硅（SiNx）栅介质与III族氮化物异质结之间的界面。在650 ℃下生长的20 nm LPCVD-SiNx具有13 MV/cm的高击穿电场和与GaN的2.75 eV的大导带偏移。通过采用LPCVD-SiNx层作为栅极和钝化层，实现了高的ON/OFF电流比（类似于10（10））以及击穿电压（类似于878 V）。最重要的是，约2.6 × 10（13）cm（-2）的正固定电荷被证实存在于LPCVD-SiNx/III-氮化物界面，如所揭示的脉冲传输特性和能带模拟。实验测定了LPCVD-SiNx/III族氮化物界面的陷阱密度。(C)2016年美国真空学会。
The interface between silicon nitride (SiNx) gate dielectric grown by low pressure chemical vapor deposition (LPCVD) and III-nitride heterostructure is investigated by a systematical comparison of AlGaN/GaN high-electron-mobility transistors (HEMTs) and metal-insulator-semiconductor HEMTs (MIS-HEMTs). A 20-nm LPCVD-SiNx grown at 650 degrees C features a high breakdown E-field of 13 MV/cm and a large conduction-band offset of 2.75 eV to GaN. High ON/OFF current ratio (similar to 10(10)) as well as breakdown voltage (similar to 878 V) is realized by employing the LPCVD-SiNx layer as both the gate and passivation dielectrics. Most important of all, about 2.6 x 10(13) cm(-2) positive fixed charges are confirmed to be present at the LPCVD-SiNx/III-nitride interface, as revealed by pulsed transfer characterizations and energy-band simulations. The trap density at LPCVD-SiNx/III-nitride interface is also experimentally determined. (C) 2016 American Vacuum Society.