Hydrogen-related, deeply bound excitons in Mg-doped GaN films
Hydrogen-related, deeply bound excitons in Mg-doped GaN films
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镁掺杂 GaN 薄膜中与氢相关的深度束缚激子
DOI：
10.1063/1.4819029
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
F. Ponce
中科院分区：
文献类型：
--
作者：
R. Juday;A. Fischer;Yu Huang;J. Huang;H. Kim;J. Ryou;R. Dupuis;D. Bour;F. Ponce
研究了金属有机化学气相沉积生长的掺镁GaN薄膜在液氦温度下近带边光谱区域的发光。在5 千伏的电子束辐照过程中，观察到3.37 eV和3.416 eV的辐射跃迁。3.37 eV峰的强度与薄膜的电阻率单调相关。通过在N_2和N_2/H_2气氛中对薄膜进行退火处理，发现薄膜的3.37和3.416 eV跃迁与氢有关。
Luminescence in the near band-edge spectral region of Mg-doped GaN films grown by metalorganic chemical vapor deposition has been studied at liquid-helium temperatures. Radiative transitions at 3.37 and 3.416 eV were observed to evolve in cathodoluminescence spectra during electron-beam irradiation at 5 kV. The intensity of the 3.37 eV peak correlates monotonically with the resistivity of the films. By annealing the films in N2 and N2/H2 atmospheres, the 3.37 and 3.416 eV transitions are shown to be related to hydrogen.