Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors
Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors
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DOI：
10.1109/led.2015.2395454
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发表时间：
2015-03-01
影响因子：
4.9
通讯作者：
Huang, Jianjang
中科院分区：
文献类型：
--
作者：
Lee, Finella;Su, Liang-Yu;Huang, Jianjang
对于传统的氮化镓基高电子迁移率晶体管（hemt）来说，栅极金属的功函数对电参数（如关断状态漏电流、正向工作电流和阈值电压）至关重要。因此需要高功函数来保持肖特基栅接触。本文制备了一种由p型GaN/AlGaN/GaN组成的增强模式HEMT。与典型hemt的肖特基势垒高度由栅极金属功函数与半导体（AlGaN或GaN）导带之间的能量差决定不同，p-GaN的插入减轻了栅极金属的限制。此外，栅极肖特基势垒现在与半导体的价带相关。本文比较了ni /Au、Ti/Au和Mo/Ti/Au三种栅极金属的HEMT性能。结果表明，V-TH和输出漏极电流之间的权衡。
For conventional GaN-based high electron mobility transistors (HEMTs), the work function of gate metal is critical to electrical parameters, such as OFF-state leakage current, forward operating current, and threshold voltage. A high work function is thus required to maintain Schottky gate contact. In this letter, an enhancement-mode HEMT composed of p-type GaN/AlGaN/GaN was fabricated. Unlike typical HEMTs that the Schottky barrier height is determined by the energy difference between gate metal work function and semiconductor (AlGaN, or GaN) conduction band, the insertion of the p-GaN relieves the constraint of gate metal. In addition, the gate Schottky barrier now correlates to the valence band of the semiconductor. Here we compare the HEMT performance of different gate metals-Ni/Au, Ti/Au, and Mo/Ti/Au. The results reveal that a tradeoff between V-TH and output drain current.