Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
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DOI：
10.1063/5.0001868
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发表时间：
2020-01
期刊：
影响因子：
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通讯作者：
Y. Sasama;T. Kageura;K. Komatsu;S. Moriyama;J. Inoue;M. Imura;Kenji Watanabe;T. Taniguchi;
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文献类型：
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作者：
Y. Sasama;T. Kageura;K. Komatsu;S. Moriyama;J. Inoue;M. Imura;Kenji Watanabe;T. Taniguchi;
金刚石场效应晶体管（FET）在电力电子和高输出高频放大器中具有潜在的应用。在这样的应用中，高电荷载流子迁移率对于降低的损耗和高速操作是期望的。我们最近已经制造了金刚石FET与六方氮化硼栅极介质，并观察到高于300 cm$^{2}$V$^{-1}$s$^{-1}$的高迁移率。在这项研究中，我们通过理论计算来研究散射机制限制了FET的迁移率。我们的计算表明，主要的载流子散射是由表面带电的杂质引起的，其密度为10 ^{12} cm$^{-2}$，并建议通过减少杂质，迁移率可能增加到1000 cm$^{2} V$^{-1} s$^{-1}$。
Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed operation. We have recently fabricated diamond FETs with a hexagonal-boron-nitride gate dielectric and observed a high mobility above 300 cm$^{2}$V$^{-1}$s$^{-1}$. In this study, we examine which scattering mechanism limits the mobility of our FETs through theoretical calculations. Our calculations reveal that the dominant carrier scattering is caused by surface charged impurities with the density of $\approx$1$\times10^{12}$ cm$^{-2}$, and suggest a possible increase in mobility over 1000 cm$^{2}$V$^{-1}$s$^{-1}$ by reducing the impurities.