Nickel silicide metallization for passivated Tunneling contacts for silicon solar cells
Nickel silicide metallization for passivated Tunneling contacts for silicon solar cells
复制标题
用于硅太阳能电池钝化隧道接触的硅化镍金属化
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
D. Young
中科院分区：
文献类型：
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作者：
Alexander Marshall;K. Florent;Astha Tapriya;Benjamin G. Lee;S. Kurinec;D. Young
钝化隧道接触为叉指背钝化接触 (IBPC) 高效硅太阳能电池的应用带来了希望。这些触点的金属化仍然是一个关键的研究课题。本文利用光致发光和接触电阻率测量研究了 NiSi/poly-Si/SiO2/c-Si 钝化接触。观察到 NiSi 和多晶硅之间的非晶硅夹层可改善钝化，减少复合。整体复合损耗与NiSi厚度呈线性趋势。 NiSi/poly-Si:P/SiO2/c-Si 触点的隐含 Voc 值接近 700 mV，触点电阻率低于 10 mohm-cm2。
Passivated tunneling contacts offer promise for applications in Interdigitated Back Passivated Contact (IBPC) high efficiency silicon solar cells. Metallization of these contacts remains a key research topic. This paper investigates NiSi/poly-Si/SiO2/c-Si passivated contacts using photoluminescence and contact resistivity measurements. An amorphous Si interlayer between the NiSi and poly-Si is observed to improve passivation, decreasing recombination. The overall recombination loss has a linear trend with the NiSi thickness. Implied Voc values close to 700 mV and contact resistivities below 10 mohm-cm2 have been achieved in NiSi/poly-Si:P/SiO2/c-Si contacts.