Low-Reverse Recovery Charge Superjunction MOSFET With a p-Type Schottky Body Diode
Low-Reverse Recovery Charge Superjunction MOSFET With a p-Type Schottky Body Diode
复制标题
具有 p 型肖特基体二极管的低反向恢复电荷超级结 MOSFET
DOI：
10.1109/led.2017.2713519
复制
发表时间：
2017-08-01
影响因子：
4.9
通讯作者：
Tang, Fang
中科院分区：
文献类型：
--
作者：
Lin, Zhi;Hu, Shengdong;Tang, Fang
本文提出了一种新型的p型肖特基体二极管低反向恢复电荷超导MOSFET(SJ-MOSFET)。该器件在漏极侧的p柱上具有p型肖特基触点。P型肖特基接触阻止电子注入漏极侧，使总载流子浓度大大降低。与传统器件相比，所提出的SJ-MOSFET具有较低的反向恢复电荷和较大的软因子。模拟结果表明，当温度为300K和400K时，反向恢复电荷分别减少了81.3%和76.0%，金属功函数为4.5 eV。优化后的金属功函数范围为4.3-4.6 eV。
A novel low-reverse recovery charge superjunction MOSFET (SJ-MOSFET) with a p-type Schottky body diode is proposed in this letter. The device has a p-type Schottky contact on the p-pillar at the drain side. Electrons are prevented from injecting into the drain side by the p-type Schottky contact, and the total carrier concentration is greatly reduced. Compared with the conventional device, the proposed SJ-MOSFET has a lower reverse recovery charge and a larger soft factor. Simulated results show that the reverse recovery charge is reduced by 81.3% and 76.0% at 300 K and 400 K, respectively, with a metal work function of 4.5 eV. The optimized metal work function range is 4.3-4.6 eV.