Band gap and band offsets of GaNAsBi lattice matched to GaAs substrate
Band gap and band offsets of GaNAsBi lattice matched to GaAs substrate
复制标题
与 GaAs 衬底匹配的 GaNAsBi 晶格的带隙和带偏移
DOI：
10.1007/s11082-008-9255-0
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发表时间：
2008
影响因子：
3
通讯作者：
K. Ferdjani
中科院分区：
文献类型：
--
作者：
S. Nacer;A. Aissat;K. Ferdjani
本文同时采用导带和价带反交叉模型计算了与GaAs衬底匹配的GaNyAsBix结构的带隙和带不连续性。计算结果与实验结果吻合较好。测定了产生1.55 μm波长发射的氮和铋浓度（x = 3.5%，y = 2%）。这种结构显示出良好的电子约束，导致高的特征温度。
In this paper, we calculate the band gap and the band discontinuities of a GaNyAsBix structure lattice matched to GaAs substrate using the conduction and the valence band anticrossing models at the same time. The results obtained show a good agreement with experiment. The nitrogen and the bismuth concentrations leading to a wavelength emission of 1.55 μm have been determined (x = 3.5%, y = 2%). This structure shows a good electron confinement resulting in a high characteristic temperature.