Luminescence Properties of ( Sr1 − u Ba u ) Si2O2N2 : Eu2 + , Yellow or Orange Phosphors for White LEDs, Synthesized with ( Sr1 − u Ba u ) 2SiO4 : Eu2 + as a Precursor
Luminescence Properties of ( Sr1 − u Ba u ) Si2O2N2 : Eu2 + , Yellow or Orange Phosphors for White LEDs, Synthesized with ( Sr1 − u Ba u ) 2SiO4 : Eu2 + as a Precursor
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DOI：
10.1149/1.2767855
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发表时间：
2007-10
影响因子：
3.9
通讯作者：
Bong-Goo Yun;Yoshinobu Miyamoto;Hajime Yamamoto
中科院分区：
文献类型：
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作者：
Bong-Goo Yun;Yoshinobu Miyamoto;Hajime Yamamoto
研究了适用于白光发光（led）的荧光粉（Sr 1-u Ba u）Si 2 O 2 n2:Eu 2+的发光特性和形成过程。这些荧光粉是用（Sr 1-u Ba u） 2 sio4: eu2 +作为前驱体而不是简单的氧化物合成的。与传统的固相反应方法相比，该方法提高了发光效率。x射线衍射分析表明，以（Sr 1-u Ba u） 2 sio4:Eu 2+为前驱体，低温型（Sr 1-u Ba u）Si 2 O 2 n2:Eu 2+转变为具有较高发光效率的高温型的可能性较大。在460 nm激发下，不同Ba分数u的（Sr 1-u Ba u）Si 2 O 2 n2:Eu 2+在550 ~ 590 nm处呈现出峰值发射带，该系列材料在u = 0.25 ~ 0.75处表现出较高的集成光致发光强度。特别是，在u = 0.5时，它显示出最高的量子输出，约为商业黄色荧光粉（Y,Gd） 3 Al 5 O 12:Ce 3+， P46-Y3的1.2倍。对于u = 0.5和0.75的样品，内部量子效率估计约为80%。高效率和小的热猝灭使这些材料适用于白光led。
Luminescence properties and formation process of (Sr 1-u Ba u )Si 2 O 2 N 2 :Eu 2+ , phosphors suitable for white light-emmitting (LEDs), were investigated. These phosphors were synthesized by a method using (Sr 1-u Ba u ) 2 SiO 4 :Eu 2+ as a precursor instead of simple oxides. Compared with a conventional solid-state reaction method, this method provides increased luminescence efficiency. X-ray diffraction analysis has indicated that transformation of low-temperature type (Sr 1-u Ba u )Si 2 O 2 N 2 :Eu 2+ to high-temperature type, which has a higher luminescence efficiency, occurs with a higher probability when (Sr 1-u Ba u ) 2 SiO 4 :Eu 2+ is used as a precursor. Under 460 nm excitation, (Sr 1-u Ba u )Si 2 O 2 N 2 :Eu 2+ shows an emission band peaked at 550-590 nm for varied Ba fraction u. This series of materials shows the high integrated photoluminescence intensity at u = 0.25-0.75. Particularly, at u = 0.5, it shows the highest quantum output, which is about 1.2 times as high as that of the commercial yellow phosphor, (Y,Gd) 3 Al 5 O 12 :Ce 3+ , P46-Y3. The internal quantum efficiency is estimated to be about 80% for samples of u = 0.5 and 0.75. The high efficiency and small thermal quenching allow these materials to be applied to white LEDs.