Thickness dependence of crystal and electronic structures within heteroepitaxially grown BiFeO3 thin films
Thickness dependence of crystal and electronic structures within heteroepitaxially grown BiFeO3 thin films
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DOI:
10.1103/physrevb.93.064115
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发表时间:
2016-02-24
影响因子:
3.7
通讯作者:
Sato, Kazuhisa
中科院分区:
文献类型:
--
作者:
Bae, In-Tae;Naganuma, Hiroshi;Sato, Kazuhisa
Crystal and electronic structures of BiFeO3 thin films (similar to 10 and similar to 300 nm) grown on SrTiO3 substrate have been investigated in terms of BiFeO3 film thickness dependence using the advanced transmission electron microscopy (TEM) technique. Electron diffraction patterns of both BiFeO3 thin films acquired along [011](SrTiO3) cross sections clearly exhibited the existence of extra Bragg's reflections which are absent in that from SrTiO3. Structure factor calculations unambiguously revealed that the electron diffraction pattern corresponds to the [211] net pattern of rhombohedral BiFeO3. High-resolution TEM images combined with multislice simulation also demonstrated that the crystalline structure of both BiFeO3 films is rhombohedral. Electron energy loss spectroscopy results for both BiFeO3 thin films showed spectra with the characteristics of bulk BiFeO3, i.e., rhombohedral. The lattice mismatch of