High-Transmittance NiSc/Ag/ITO p-Type Ohmic Electrode for Near-UV GaN-Based Light-Emitting Diodes
High-Transmittance NiSc/Ag/ITO p-Type Ohmic Electrode for Near-UV GaN-Based Light-Emitting Diodes
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用于近紫外 GaN 基发光二极管的高透射率 NiSc/Ag/ITO p 型欧姆电极
DOI：
10.3938/jkps.51.159
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发表时间：
2007
影响因子：
0.6
通讯作者：
K. Kim
中科院分区：
文献类型：
--
作者：
H. Hong;H. Na;T. Seong;Takhee Lee;June O. Song;K. Kim
报道了用于GaN基近紫外光发光二极管(LED)的NISC(2.5 nm)/Ag(2.5 nm)/ITO(200 Nm)透明p型欧姆电极的形成。结果表明，NiSc(2 5 Nm)/Ag(2 5 Nm)/ITO(2 0 0 Nm)接触形成欧姆接触，接触电阻率为4.9×10−3Ωcm，在40 0 nm处的透过率为80%，在空气中630◦C热处理1min。用退火态NiSc/Ag/ITOp接触制备的近紫外光(400 Nm)LED在20 mA时的正向偏置电压为3.69V，串联电阻为21.1mV，优于Ni/Au接触的结果。根据俄歇电子能谱和电学结果，描述了可能的欧姆形成机制。
We report on the formation of NiSc(2.5 nm)/Ag(2.5 nm)/ITO(200 nm) transparent p-type Ohmic electrodes for GaN-based near-UV light-emitting diodes (LEDs). We show that the NiSc(2.5 nm)/Ag(2.5 nm)/ITO(200 nm) contacts become Ohmic with contact resistivity of 4.9 × 10−3 Ωcm and a transmittance of 80 % at 400 nm when annealed at 630 ◦C for 1 min in air. Near-UV (400 nm) LEDs fabricated with the annealed NiSc/Ag/ITO p-contacts give a forward-bias voltage of 3.69 V at 20 mA and a series resistance of 21.1 Ω, which are better than those for Ni/Au contacts. Based on Auger electron spectroscopy and electrical results, possible Ohmic formation mechanisms are described.