All-dielectric GaN microcavity: Strong coupling and lasing at room temperature
All-dielectric GaN microcavity: Strong coupling and lasing at room temperature
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DOI：
10.1063/1.4795019
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发表时间：
2013-03-11
影响因子：
4
通讯作者：
Savvidis, P. G.
中科院分区：
文献类型：
--
作者：
Daskalakis, K. S.;Eldridge, P. S.;Savvidis, P. G.
在室温下，通过将高光学质量的GaN膜内的全介质镜腔制作的GaN微腔中的强光-物质耦合制度和激光被证明。非线性增加的发射和线变窄标志着极化激元激光制度的开始与显着降低的阈值相比，以前的报告体GaN微腔。低激光阈值和易于制造的这种组合允许将量子威尔斯和电接触结合到有源区中，为电驱动室温（RT）极化激元激光器件铺平了道路。(C)2013年美国物理学会。[http：//dx.doi.org/10.1063/1.4795019]
The strong light-matter coupling regime and lasing in a GaN microcavity fabricated by incorporating a high optical quality GaN membrane inside an all-dielectric mirror cavity is demonstrated at room temperature. A nonlinear increase of the emission and line narrowing marks the onset of polariton lasing regime with significantly reduced threshold compared with previous reports for bulk GaN microcavity. This combination of low lasing thresholds and ease of fabrication allows incorporation of quantum wells and electrical contacts into the active region, paving the way for electrically driven room temperature (RT) polariton laser devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795019]