Origin of low threshold field emission from nitrogen-incorporated nanocrystalline diamond films
Origin of low threshold field emission from nitrogen-incorporated nanocrystalline diamond films
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DOI：
10.1063/1.3115767
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发表时间：
2009-04-06
影响因子：
4
通讯作者：
Teii, Kungen
中科院分区：
文献类型：
--
作者：
Ikeda, Tomohiro;Teii, Kungen
高导电性，氮掺入纳米金刚石薄膜准金属字符发射电子在低开启领域（类似于3 V μ m（-1））。这些薄膜表现出更强的载流子离域，表明带隙中的缺陷带之间的能量分离较小。我们表明，来自测量的发射特性和电子亲和力的发射水平向上移动（高达几个电子伏特），增加薄膜的导电性，从而降低有效的势垒高度的发射。这是由于在传输过程中，电子注入到上缺陷能级的概率较高，源于内部能带弯曲和增加能带连续性。
Highly conductive, nitrogen-incorporated nanocrystalline diamond films with quasimetallic character emit electrons at low turn-on fields (similar to 3 V mu m(-1)). These films exhibit stronger delocalization of carriers, indicative of smaller energy separation between the defect bands in the band gap. We show that the emission level derived from the measured emission characteristic and electron affinity shifts upward (up to a few eV) with increasing the film conductivity, thereby decreasing the effective potential barrier height for the emission. This is attributed to higher probabilities of electron injection into upper defect levels during the transport process, originating from internal band bending and increasing band continuity.