Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix/GaAs heterostructures
Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix/GaAs heterostructures
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DOI：
10.1088/0022-3727/46/6/065306
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发表时间：
2013-02-13
影响因子：
3.4
通讯作者：
Salamo, G. J.
中科院分区：
文献类型：
--
作者：
Mazur, Yu I.;Dorogan, V. G.;Salamo, G. J.
研究了一组Bi浓度为3.5%~ 6.7%的高质量GaAs_（1-x）Bix/GaAs量子阱异质结的结构和光学性质。激子基态跃迁的能量被确定为Bi浓度和空间限制的函数。研究了材料无序对量子阱光学性质的影响。确定了取决于Bi浓度是大于还是小于5%，陷阱相关发光对温度变化的响应不同。低于5%，它对整个光致发光线形状有显著贡献，而高于5%，它是微不足道的。
The structural and optical properties of a set of high-quality GaAs1-xBix/GaAs quantum well (QW) heterostructures with Bi concentrations ranging from 3.5% to 6.7% are studied. The energies of the excitonic ground state transitions are determined as a function of Bi concentration and spatial confinement. The influence of material disorder on the optical properties of QWs is investigated. It is determined that trap-related luminescence responds differently to temperature changes depending on whether the Bi concentration is more or less than 5%. Below 5% it contributes significantly to the overall photoluminescence line shape whereas above 5%, it is insignificant.