Increasing the Fill Factor of Inverted P3HT:PCBM Solar Cells Through Surface Modification of Al-Doped ZnO via Phosphonic Acid-Anchored C60 SAMs
Increasing the Fill Factor of Inverted P3HT:PCBM Solar Cells Through Surface Modification of Al-Doped ZnO via Phosphonic Acid-Anchored C60 SAMs
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DOI：
10.1002/aenm.201100668
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发表时间：
2012-05-01
影响因子：
27.8
通讯作者：
Brabec, Christoph J.
中科院分区：
文献类型：
--
作者：
Stubhan, Tobias;Salinas, Michael;Brabec, Christoph J.
研究了铝掺杂氧化锌（AZO）电子引出层表面自组装膜（SAMs）修饰对倒置聚合物太阳能电池性能的影响。结果表明，AZO修饰的膦酸锚定富勒烯自组装膜的串联电阻降低，而并联电阻增加。这导致效率从2.9%提高到3.3%。（版权所有2012 WILEY-VCH Verlag GmbH and Co. KGaA，魏因海姆）
The influence of aluminum-doped zinc oxide (AZO) electron extraction layers modified with self-assembled monolayers (SAMs) on inverted polymer solar cells is investigated. It is found that AZO modification with phosphonic acid-anchored Fullerene-SAMs leads to a reduction of the series resistance, while increasing the parallel resistance. This results in an increased efficiency from 2.9 to 3.3%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)