Localized surface plasmon-enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes
Localized surface plasmon-enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes
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ZnO 基异质结发光二极管的局域表面等离子体增强电致发光
DOI：
10.1063/1.3658392
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发表时间：
2011-10-31
影响因子：
4
通讯作者：
Tao, Y.
中科院分区：
文献类型：
--
作者：
Zhang, S. G.;Zhang, X. W.;Tao, Y.
我们展示了表面等离子体（SP）增强n-ZnO/AlN/p-GaN发光二极管（LED）通过插入银纳米粒子（NPs）之间的ZnO和AlN层。与没有Ag纳米颗粒的LED相比，该器件的紫外/紫光近带边发射显著增强，而与绿色缺陷相关的发射被适度抑制。ZnO的电致发光（EL）峰的红移和光致发光衰减寿命的降低表明，Ag纳米颗粒改善器件的电致发光性能是由于ZnO中激子与Ag纳米颗粒中局域SPs之间的共振耦合。
We demonstrate the surface plasmon (SP) enhanced n-ZnO/AlN/p-GaN light-emitting diodes (LEDs) by inserting the Ag nanoparticles (NPs) between the ZnO and AlN layers. The ultraviolet/violet near band edge emission of the device is significantly enhanced while the green defect-related emission is modestly suppressed compared to the LEDs without Ag NPs. The red-shift of electroluminescence (EL) peak and the reduced photoluminescence decay lifetime of ZnO suggest that the improved EL performance of the device with Ag NPs is attributed to the resonant coupling between excitons in ZnO and localized SPs in Ag NPs.