Nanogranular Co-Fe-Al-O sputtered thin films for magnetoelastic device applications in the GHz frequency range
Nanogranular Co-Fe-Al-O sputtered thin films for magnetoelastic device applications in the GHz frequency range
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DOI：
10.1016/j.jmmm.2003.12.1009
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发表时间：
2004-05
影响因子：
2.7
通讯作者：
J. Sohn;D. Byun;S. Lim
中科院分区：
文献类型：
--
作者：
J. Sohn;D. Byun;S. Lim
在Ar+ O2气氛下，采用射频磁控溅射法制备了GHz磁弹性器件用Co-Fe-Al-O纳米颗粒薄膜。电阻率高达400μΩcm，饱和磁化强度（4 π MS）为16 kG，各向异性场为45 Oe，具有优良的高频磁性能，如2.3GHz的高铁磁共振频率和315的大真实的磁导率。在低至20 Oe的磁场下，饱和磁致伸缩为45 ppm。
Co–Fe–Al–O nanogranular thin films for magnetoelastic device applications in the GHz frequency range are fabricated by RF-magnetron sputtering under an Ar+O2atmosphere. A very large resistivity up to 400μΩcm, a saturation magnetization (4 π MS) of 16kG and an anisotropy field of 45Oe are consistently obtained, resulting in excellent high-frequency magnetic properties, such as a high ferromagnetic resonance frequency of 2.3GHz combined with a large real part of permeability of 315. A saturation magnetostriction of 45ppm is achieved at a magnetic field as low as 20Oe.