Domain boundaries in the GaAs(001)-2×4 surface
Domain boundaries in the GaAs(001)-2×4 surface
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GaAs(001)-2×4 表面的畴界
DOI：
10.1103/physrevb.68.085321
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发表时间：
2003
影响因子：
3.7
通讯作者：
J. Mizuki
中科院分区：
文献类型：
--
作者：
M. Takahasi;Y. Yoneda;N. Yamamoto;J. Mizuki
α，β。用表面X射线衍射法研究了GaAs（001）-2 4表面在480°C ~ 610°C温度范围内的X相和γ相。已经发现，源自四重对称的分数阶峰显示出在[110]方向上的移位以及在a和y相中的峰的显著加宽。峰移的方向是每个相位的特征。这种行为是由反相畴界的形成来解释的。讨论了畴界的原子结构。
The α, β. and γ phases of the GaAs(001)-2×4 surface have been investigated by in situ surface x-ray diffraction in an As flux and at temperatures ranging from 480°C to 610°C. It has been found that the fractional-order peaks originating from the fourfold symmetry show shift in the [110] direction as well as significant broadening of the peaks in the a and y phases. The direction of the peak shift is characteristic in each phase. This behavior is explained by the formation of the antiphase domain boundaries. The atomic structure of the domain boundaries is discussed.