Characterisation of an extended cavity violet diode laser
Characterisation of an extended cavity violet diode laser
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DOI：
10.1016/s0030-4018(99)00742-7
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发表时间：
2000-02
影响因子：
2.4
通讯作者：
R. Conroy;J. Hewett;G. Lancaster;W. Sibbett;J. W. Allen;K. Dholakia
中科院分区：
文献类型：
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作者：
R. Conroy;J. Hewett;G. Lancaster;W. Sibbett;J. W. Allen;K. Dholakia
我们描述了一个紧凑的，扩展腔几何氮化镓紫色激光二极管的结构和特性。在392 nm产生高达3.5 mW的单频功率，在6 GHz范围内连续可调谐，在2.7 nm范围内粗略可调谐。我们对5兆赫的线宽设置了上限。在扩展的腔体几何结构中，将紫色二极管激光器的性能与可见二极管激光器的性能进行了比较。讨论了可能的光谱应用。
We describe the construction and characterisation of a GaN violet laser diode in a compact, extended cavity geometry. Up to 3.5 mW of single frequency power at 392 nm is generated which is continuously tuneable over 6 GHz and coarsely tuneable over 2.7 nm. We place an upper limit on the linewidth of 5 MHz. The performance of the violet diode laser is compared to that of visible laser diodes in our extended cavity geometry. Possible spectroscopic applications are discussed.