Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films
Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films
复制标题
低温生长 GaAs 外延薄膜的光谱表征
DOI：
10.1143/jjap.33.4807
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发表时间：
1994
影响因子：
1.5
通讯作者：
N. Tsukada
中科院分区：
文献类型：
--
作者：
M. Tani;K. Sakai;H. Abe;S. Nakashima;H. Harima;M. Hangyo;Y. Tokuda;K. Kanamoto;Y. Abe;N. Tsukada
对在200 ~ 300° C温度下生长并退火的GaAs外延层进行了飞秒时间分辨反射和拉曼散射研究。在250° C下生长并在600° C下退火的样品的亚皮秒载流子寿命（≤ 0.25 ps）已被测量。使用背散射几何结构的拉曼测量显示，在200° C和250° C下生长的样品具有强的TO声子带，而在275 ° C和300° C下生长的样品不存在TO声子带。随着生长温度的降低，本振带的带宽增加。对于在200和250° C下生长的样品，在200 cm-1处也观察到对应于As沉淀物的声子带。发现载流子寿命的测量值与拉曼谱有很强的相关性。
Femtosecond time-resolved reflectance and Raman scattering studies have been made on GaAs epitaxial layers grown at temperatures between 200 and 300° C and subsequently annealed. A subpicosecond carrier lifetime (∼0.25 ps) has been measured for a sample grown at 250° C and annealed at 600° C. Raman measurements using a back scattering geometry show a strong TO phonon band for samples grown at 200° C and 250° C, while it is absent for samples grown at 275 and 300° C. The band width of the LO band increases with decreasing growth temperature. A phonon band corresponding to As precipitates is also observed at 200 cm-1 for samples grown at 200 and 250° C. A strong correlation is found between the measured carrier lifetime and Raman profile.