Surface Wave Plasma Oxidation at Low Temperature under Rare Gas Dilution
Surface Wave Plasma Oxidation at Low Temperature under Rare Gas Dilution
复制标题
稀有气体稀释下的低温表面波等离子体氧化
DOI：
10.1143/jjap.42.7033
复制
发表时间：
2003
影响因子：
1.5
通讯作者：
Y. Nakata
中科院分区：
文献类型：
--
作者：
M. Goto;K. Azuma;T. Okamoto;Y. Nakata
研究了氪气稀释条件下表面波等离子体氧化多晶硅薄膜晶体管（TFT）栅介质的工艺。阐明了稀有气体稀释下等离子体氧化的动力学以及氧化速率与等离子体特性的关系。同时也阐明了在氪气稀释下表面波等离子体中氧原子的产生主要是通过两个过程：O2气体的电子碰撞解离和氪气与O2气体反应而猝灭。用于等离子体氧化的在稀有气体稀释下的等离子体动力学可以解释如下：用稀有气体高度稀释的等离子体产生高密度电子和稀有气体可吸收物，其有效地从少量O2气体产生高密度氧原子。高密度的氧原子使等离子体的氧化速度加快。在300°C下等离子体氧化膜的结构和界面性质与热氧化膜的结构和界面性质非常相似。在低温下，表面波等离子体氧化是非常有效的，特别是在稀有气体稀释下。
Surface wave plasma oxidation was investigated under Kr gas dilution for the formation of the gate dielectric of poly-Si thin film transistors (TFTs). We clarified the plasma kinetics of plasma oxidation under rare gas dilution and the relationship between the oxidation rate and the plasma characteristics. It was also clarified that the oxygen atom in the surface wave plasma under Kr gas dilution is mainly generated by two processes: the electron impact dissociation of O2 gas and the quenching of Kr metastables through the reaction with O2 gas. The plasma kinetics under rare gas dilution for plasma oxidation can be explained as follows: The plasma highly diluted with rare gas generates high-density electrons and rare gas metastables, which efficiently generate high-density oxygen atoms from a small amount of O2 gas. Then the high-density oxygen atoms increase plasma oxidation rate. The structure and interface properties of the plasma-oxide films at 300°C are very similar to those of the thermal-oxide. At low temperatures, surface wave plasma oxidation is very effective especially under rare gas dilution.