Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: Self-consistent simulation study
Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: Self-consistent simulation study
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DOI：
10.1002/pssc.200880858
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发表时间：
2009-06
期刊：
影响因子：
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通讯作者：
D. Baláž;K. Kalna;Martin Kuball;M. Uren;A. Asenov
中科院分区：
文献类型：
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作者：
D. Baláž;K. Kalna;Martin Kuball;M. Uren;A. Asenov
采用自一致数值模拟方法研究了场致极化对高电子迁移率晶体管（HEMTs）特性的影响。由于晶格失配，外电场引起的应变位于内置应变之上。有人认为，这种额外的应变可以在器件退化和失效中发挥作用（J. john和J. del Alamo， GaN高电子迁移率晶体管的电退化机制，IEDM Tech. Dig）。，第415-418页，十二月（2006）[1])。该研究使用商用TCAD工具对0.25 μm物理栅长晶体管的测量特性进行了仔细校准。压电材料的耦合模型，包括场的影响，用于确定应变，从而确定器件中的极化。空间电荷分布由极化梯度导出，并自一致地反馈给模拟器。对有场致极化和无场致极化的结果进行了比较和讨论。（©2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim）
Using self-consistent numerical simulation we have studied the impact of the field induced polarization on the characteristics of AlGaN/GaN high electron mobility transistors (HEMTs). The strain induced by external electric fields is on top of the built-in strain due to lattice mismatch. It has been suggested that this additional strain can play a role in device degradation and failure (J. Joh and J. del Alamo, Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors, IEDM Tech. Dig., pp. 415–418, Dec. (2006) [1]). The study is carried out using commercial TCAD tools carefully calibrated against the measured characteristics of 0.25 μm physical gate length transistors. A coupled model for piezoelectric materials, including the impact of the field, is used to determine the strain and thus the polarization in the device. The spatial charge distribution is derived from the gradient of the polarization and is fed back self-consistently to the simulator. Results with and without the field-induced polarization are compared and discussed. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)