Power MOSFET Thermal Instability Operation Characterization Support
Power MOSFET Thermal Instability Operation Characterization Support
复制标题
功率 MOSFET 热不稳定性操作表征支持
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
H. Leidecker
中科院分区：
文献类型：
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作者：
Jack Shue;H. Leidecker
金属氧化物半导体场效应晶体管 (MOSFET) 广泛用于飞行硬件和地面支持设备。为了追求更快的开关时间和更低的“导通电阻”，从 1998 年至今设计的 MOSFET 已经实现了大部分预期目标。为了寻求更低的导通电阻和更高的开关速度，现在正在生产的设计允许电荷载流子主导区域（曾经很小并且在关注区域之外）变得重要并位于安全工作区域（SOA）内。随着温度升高，载流子主导区域允许更多电流流动。温度越高，产生的电流越大，导致热失控的开始。热失控是一个影响多个制造商生产的各种现代 MOSFET 的问题。该报告包含有关 MOSFET 故障、其原因、测试结果和信息发布的信息。
Metal-oxide semiconductor field-effect transistors (MOSFETs) are used extensively in flight hardware and ground support equipment. In the quest for faster switching times and lower "on resistance," the MOSFETs designed from 1998 to the present have achieved most of their intended goals. In the quest for lower on resistance and higher switching speeds, the designs now being produced allow the charge-carrier dominated region (once small and outside of the area of concern) to become important and inside the safe operating area (SOA). The charge-carrier dominated region allows more current to flow as the temperature increases. The higher temperatures produce more current resulting in the beginning of thermal runaway. Thermal runaway is a problem affecting a wide range of modern MOSFETs from more than one manufacturer. This report contains information on MOSFET failures, their causes and test results and information dissemination.