Theoretical Study of Carrier Transport in Silicon Nanowire Transistors Based on the Multisubband Boltzmann Transport Equation
Theoretical Study of Carrier Transport in Silicon Nanowire Transistors Based on the Multisubband Boltzmann Transport Equation
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DOI：
10.1109/ted.2008.2005172
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发表时间：
2008-11
影响因子：
3.1
通讯作者：
Seonghoon Jin;Massimo V. Fischetti;T. Tang
中科院分区：
文献类型：
--
作者：
Seonghoon Jin;Massimo V. Fischetti;T. Tang
We study electronic transport in silicon nanowire transistors at room temperature based on the self-consistent numerical solution of the multisubband Boltzmann transport equation and Poisson equation. The Schrodinger equation with nonparabolic corrections is solved in order to obtain the multisubband structure. Relevant microscopic scattering mechanisms due to acoustic and intervalley phonons, surface roughness, and ionized impurities are included in the simulation. A flux-conserving discretization scheme based on the uniform total energy grid is employed to avoid excessive numerical diffusion originating from the conventional kinetic-energy-based upwind scheme. We report an interesting kink behavior in the output characteristics and study the electron energy distribution inside the transistor as a function of bias conditions and scattering mechanisms.
