Precipitation of iron in multicrystalline silicon during annealing
Precipitation of iron in multicrystalline silicon during annealing
复制标题
退火过程中多晶硅中铁的析出
DOI：
10.1063/1.4868587
复制
发表时间：
2014
影响因子：
3.2
通讯作者：
D. Macdonald
中科院分区：
文献类型：
--
作者：
A. Liu;D. Macdonald
本文从退火时间、温度、铁过饱和度以及不同析出点类型和密度等方面系统研究了中温退火过程中多晶硅中铁的析出动力学。定量分析基于检查多晶硅片在 400–700°C 退火后间隙铁浓度和分布的变化。这是通过使用光致发光成像技术产生间隙铁浓度的高分辨率空间分辨图像来实现的。发现间隙铁的浓度随着退火时间呈指数下降。在不同温度和不同初始间隙铁浓度下退火的晶片的沉淀时间常数的比较表明，较高水平的铁过饱和导致更快的沉淀过程。铁过饱和对降水量的影响
In this paper, the precipitation kinetics of iron in multicrystalline silicon during moderate temperature annealing are systematically studied with respect to annealing time, temperature, iron super-saturation level, and different types and densities of precipitation sites. The quantitative analysis is based on examining the changes in the concentrations and distributions of interstitial iron in multicrystalline silicon wafers after annealing at 400–700 °C. This is achieved by using the photoluminescence imaging technique to produce high-resolution spatially resolved images of the interstitial iron concentrations. The concentrations of interstitial iron are found to decrease exponentially with the annealing time. Comparison of the precipitation time constants of wafers annealed at different temperatures and of different initial interstitial iron concentrations indicates that higher levels of iron super-saturation result in faster precipitation processes. The impact of iron super-saturation on the precipit...