Cluster emission during sputtering of liquid gallium-aluminum eutectic alloy
Cluster emission during sputtering of liquid gallium-aluminum eutectic alloy
复制标题
液态镓铝共晶合金溅射过程中的团簇发射
DOI：
10.1063/1.360633
复制
发表时间：
1995
影响因子：
3.2
通讯作者：
M. Pellin
中科院分区：
文献类型：
--
作者：
T. Lill;W. Calaway;M. Pellin
Abundance distributions of ionic and neutral clusters sputtered by 4 keV argon ion impacts on a liquid gallium‐aluminum eutectic alloy have been measured by time‐of‐flight mass spectrometry. To photoionize the neutral species, a 193 nm (6.4 eV) ArF laser has been used. Neutral and ionic clusters as large as Ga14 and mixed clusters of the form GanAl with n≤13 were detected. The abundance of the monoaluminum mixed clusters is found to increase with nuclearity and is discussed as the consequence of an increasing clusters depth of origin as the nuclearity increases. A comparison of the results with those obtained from the gallium‐indium eutectic alloy reveals a similar cluster nuclearity dependence of the depth of origin.
