Single-defect spectroscopy in the shortwave infrared
Single-defect spectroscopy in the shortwave infrared
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DOI：
10.1038/s41467-019-10788-8
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发表时间：
2019-06
影响因子：
16.6
通讯作者：
Xiaojian Wu;Mijin Kim;Haoran Qu;YuHuang Wang
中科院分区：
文献类型：
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作者：
Xiaojian Wu;Mijin Kim;Haoran Qu;YuHuang Wang
在短波红外中发出荧光的化学缺陷为深穿透生物成像、化学特异性传感和量子技术带来了令人兴奋的机会。然而，缺陷的原子尺寸和红外探测器的高噪声给这些独特发射器的研究带来了重大挑战。在这里，我们展示了短波红外中的高通量单缺陷光谱学，能够在单一缺陷水平上定量和光谱解析化学缺陷。通过将 InGaAs 探测器阵列冷却至 −190°C 并实施无损读出方案，我们能够捕获短波红外中的弱光荧光事件，并将信噪比提高三个数量级以上。作为演示，我们证明可以解决碳纳米管半导体中的单个化学缺陷，同时在单个缺陷极限下收集整个视场内每个缺陷的全光谱。
Chemical defects that fluoresce in the shortwave infrared open exciting opportunities in deep-penetration bioimaging, chemically specific sensing, and quantum technologies. However, the atomic size of defects and the high noise of infrared detectors have posed significant challenges to the studies of these unique emitters. Here we demonstrate high throughput single-defect spectroscopy in the shortwave infrared capable of quantitatively and spectrally resolving chemical defects at the single defect level. By cooling an InGaAs detector array down to −190 °C and implementing a nondestructive readout scheme, we are able to capture low light fluorescent events in the shortwave infrared with a signal-to-noise ratio improved by more than three orders-of-magnitude. As a demonstration, we show it is possible to resolve individual chemical defects in carbon nanotube semiconductors, simultaneously collecting a full spectrum for each defect within the entire field of view at the single defect limit.