2D NbOI2: A Chiral Semiconductor with Highly In-Plane Anisotropic Electrical and Optical Properties
2D NbOI2: A Chiral Semiconductor with Highly In-Plane Anisotropic Electrical and Optical Properties
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DOI：
10.1002/adma.202101505
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发表时间：
2021-06-06
影响因子：
29.4
通讯作者：
Huang, Fuqiang
中科院分区：
文献类型：
--
作者：
Fang, Yuqiang;Wang, Fakun;Huang, Fuqiang
探索面内各向异性二维材料对偏振敏感光电子学的基础研究和进一步发展具有重要意义。在此，手性二碘化氧化铌（NbOI 2）被引入到有趣的各向异性的二维家庭与各向异性的光学和电学性能的实验证明。由于Nb原子沿着B轴和c轴的键合模式不同，二维NbOI2晶体在费米面附近呈现出高度各向异性的色散能带结构，声子振动具有较强的面内各向异性。因此，二维NbOI_2晶体的光吸收和光响应的各向异性因子分别达到1.75和1.7。这些各向异性的性能使2D NbOI2的一个有趣的平台，新的偏振敏感的光电应用。
Exploring in-plane anisotropic 2D materials is of great significance to the fundamental studies and further development of polarizationsensitive optoelectronics. Herein, chiral niobium oxide diiodide (NbOI2) is introduced into the intriguing anisotropic 2D family with the experimental demonstration of anisotropic optical and electrical properties. 2D NbOI2 crystals exhibit highly anisotropic dispersed band structures around the Fermi surface and strong in-plane anisotropy of phonon vibrations owing to the different bonding modes of Nb atoms along the b- and c-axes. Consequently, the anisotropic factors of optical absorbance and photoresponsivity in 2D NbOI2 crystals reach up to 1.75 and 1.7, respectively. These anisotropic properties make 2D NbOI2 an interesting platform for novel polarization-sensitive optoelectronic applications.