Simultaneous Formation of Multiwall Carbon Nanotubes and their End-Bonded Ohmic Contacts to Ti Electrodes for Future ULSI Interconnects

Simultaneous Formation of Multiwall Carbon Nanotubes and their End-Bonded Ohmic Contacts to Ti Electrodes for Future ULSI Interconnects
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同时形成多壁碳纳米管及其与钛电极的端键欧姆接触,用于未来的 ULSI 互连

DOI:
10.1143/jjap.43.1856
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发表时间:
2004
影响因子:
1.5
通讯作者:
Y. Awano
Y. Awano
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
M. Nihei;M. Horibe;A. Kawabata;Y. Awano

文献摘要

被引文献

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我们已经成功地生长多壁碳纳米管(MWNTs)与低电阻欧姆接触的钛电极,通过热灯丝化学气相沉积(HF-CVD)使用镍催化剂层上的钛电极。具有镍/钛电极的样品的接触电阻比具有不含钛的镍催化剂电极的样品的接触电阻小两个数量级。我们假设,低电阻欧姆接触是通过在MWNT/钛电极界面生长过程中形成碳化钛(TiC)来实现的。此外,我们已经证明了垂直对齐束的多壁碳纳米管,这是端键合到较低的钛电极,选择性地在通孔的生长。我们相信,这是第一次报告,这种同时形成的MWNTs和他们的端键合低电阻欧姆接触,其首次试用应用于碳纳米管(CNT)过孔未来ULSI互连。
We have succeeded in growing multiwall carbon nanotubes (MWNTs) with low-resistance ohmic contacts to titanium electrodes by hot-filament chemical vapor deposition (HF-CVD) using a nickel catalyst layer on a titanium electrode. The contact resistance of the sample with nickel/titanium electrodes was two orders of magnitude smaller than that of the sample with nickel catalyst electrodes without titanium. We assumed that the low-resistance ohmic contact was achieved by forming titanium carbide (TiC) during the growth at the MWNT/titanium electrode interface. Moreover, we have demonstrated the growth of vertically aligned bundles of MWNTs, which were end-bonded to the lower titanium electrodes, selectively in via holes. We believe this is the first report of such simultaneous formation of MWNTs and their end-bonded low-resistance ohmic contacts, and its first trial application to carbon nanotube (CNT) vias for future ULSI interconnects.