Low magnetic damping for equiatomic CoFeMnSi Heusler alloy
Low magnetic damping for equiatomic CoFeMnSi Heusler alloy
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DOI：
10.1088/1361-6463/aae4ef
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发表时间：
2018-12-12
影响因子：
3.4
通讯作者：
Mizukami, S.
中科院分区：
文献类型：
--
作者：
Bainsla, L.;Yilgin, R.;Mizukami, S.
具有低吉尔伯特阻尼和低磁化强度的磁性材料对于实现基于自旋转移矩的更快或更节能的自旋电子器件是必需的。在这里，我们报告吉尔伯特阻尼外延生长的等原子四元CoFeMnSi Heusler合金薄膜。10 nm厚的膜显示出饱和磁化强度Ms = 630 emu cm（-3）和吉尔伯特阻尼常数α = 2.7 × 10（-3），除了其软磁性之外，它们在过渡金属铁磁体中是相对较小的值。根据第一性原理计算的类自旋无隙电子结构和化学序的影响，讨论了相对低阻尼的物理起源和α进一步降低到类似于10（-4）的超低阻尼区的可能性。
Magnetic materials with low Gilbert damping and low magnetization are necessary for the realization of faster or more energy-efficient spintronic devices based on spin-transfer-torque. Here, we report Gilbert damping in epitaxially grown equiatomic quaternary CoFeMnSi Heusler alloy films. The 10 nm-thick films show a saturation magnetization of Ms = 630 emu cm(-3) and a Gilbert damping constant of alpha = 2.7 x 10(-3), which are relatively small values among transition metal ferromagnets, in addition to its soft magnetic properties. The physical origin of the relatively low damping and the possibility of a further reduction of a to the ultra-low damping regime similar to 10(-4) are discussed in terms of the spin-gapless-like electronic structure and the effect of the chemical order computed from first principles.